Correlation between photoluminescence intensity and micro structure in amorphous silicon films prepared by reactive RF sputtering

We report on the efficient photoluminescence (PL) of a-Si:H film prepared b y reactive RF sputtering. The PL intensity and optical properties of the sp uttered film depend on the input RF power. Stronger PL intensity at room te mperature was observed for films deposited at low input RF power. The PL in tensity of this film is stronger than that prepared by the plasma-enhanced chemical vapor deposition. The PL intensity did not correlate with the defe ct density but correlated with the number of SiH2 units in the film. A cons iderable number of SiH2 units in the film reduced transitions of electrons and/or holes to nonradiative centers.