Predictive study of a plasma structure and function in reactive ion etcherdriven by very high frequency: Validity of an extended two-dimensional relaxation continuum model
K. Maeshige et al., Predictive study of a plasma structure and function in reactive ion etcherdriven by very high frequency: Validity of an extended two-dimensional relaxation continuum model, J APPL PHYS, 88(8), 2000, pp. 4518-4524
The plasma structure and physical function of a narrow gap reactive ion etc
her (RIE), consisting of capacitively coupled parallel plates driven at 100
MHz, have been predicted in a proper manner by an extended relaxation cont
inuum model including gas flow and sputtered particle transport from the su
bstrate. Monitoring the spatiotemporal excitation rate gives validity to th
e use of the continuum model even at 50 mTorr under higher power condition
mainly maintained by an ionization multiplication of the secondary electron
s ejected from the powered electrode by ion impacts. The plasma structures
are testified by comparing the two-dimensional net excitation rate of Ar(3p
(5)) with the experimental computerized tomography image. A nonvolatile par
ticle transport successive to the physical etching on the substrate has bee
n predicted in the RIE under a feed gas flow. (C) 2000 American Institute o
f Physics. [S0021-8979(00)08920-9].