A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC

Beryllium implantation induced defects in 6H-SiC pn junctions have been inv estigated by deep level transient spectroscopy. Five defect centers labeled BE1, BE2, BE3, BE4, and BE5 have been detected in the temperature range 10 0-450 K. A comparative study has also been performed in low beryllium doped n-type 6H-SiC, which proved that the BE1, BE2, and BE3 centers are electro n traps located at 0.34, 0.44, and 0.53 eV, respectively, below the conduct ion band edge. On the other hand, the BE4 and BE5 centers have been found t o be hole traps which are situated at 0.64 and 0.73 eV, respectively, above the valence band edge. Possible defect configurations associated with thes e deep levels are discussed. (C) 2000 American Institute of Physics. [S0021 -8979(00)03817-2].