Relaxation model of coherent island formation in heteroepitaxial thin films

Citation
Ra. Budiman et He. Ruda, Relaxation model of coherent island formation in heteroepitaxial thin films, J APPL PHYS, 88(8), 2000, pp. 4586-4594
Citations number
54
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
8
Year of publication
2000
Pages
4586 - 4594
Database
ISI
SICI code
0021-8979(20001015)88:8<4586:RMOCIF>2.0.ZU;2-L
Abstract
A model for coherent island formation in heteroepitaxial thin films is pres ented by focusing on the interplay between surface and strain relaxation en ergies. The resulting free energy is mapped onto the Landau free energy, an d yields the local surface slope as the order parameter for island formatio n. Isotropic islands are found to exhibit second-order transitions. We argu e that our model is appropriate for describing the nucleation and stability of island formation. The spinodal curve indicates that there exists an uns table regime where spinodal-like islands emerge as low-slope islands, even in a highly mismatched heteroepitaxial system. (C) 2000 American Institute of Physics. [S0021- 8979(00)00521-1].