Monte Carlo study of kinetic smoothing during dissolution and etching of the Kossel (100) and silicon (111) surfaces

We have analyzed the asymmetry between growth and dissolution using Monte C arlo simulations of flat and vicinal (100) surfaces of a Kossel crystal. We find that at a high driving force dissolution is very anisotropic and near ly atomically flat surfaces are produced, if the nearest-neighbor bond stre ngth is sufficiently large. This effect we call kinetic smoothing. For wet- chemical etching of the Si(111) surface, the chemical-etch reaction determi nes the annihilation rate constants. If the differences between the rate co nstants for removal of atoms from kink, step, and terrace sites are large e nough, then we observe smooth surfaces and anisotropic etching, i.e., kinet ic smoothing. If etching is anisotropic, knowledge of the annihilation rate constants suffices to find an analytical expression for the etch rate as a function of misorientation. This expression can be used to fit experimenta l etch rates for etching of vicinal Si(111) in potassium hydroxide. (C) 200 0 American Institute of Physics. [S0021-8979(00)09319-1].