Electronic transport in thin film electroluminescence of SrS : Ce

Citation
Cx. Xu et al., Electronic transport in thin film electroluminescence of SrS : Ce, J APPL PHYS, 88(8), 2000, pp. 4623-4627
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
8
Year of publication
2000
Pages
4623 - 4627
Database
ISI
SICI code
0021-8979(20001015)88:8<4623:ETITFE>2.0.ZU;2-V
Abstract
Thin film electroluminescent (TFEL) devices based on the scheme of SiO2/SrS :Ce/SiO2/SiO were fabricated, and blue-green emission was observed in the d evices. The electronic transport process is strongly affected by the mixing interaction between the conduction band of SrS and the excited state of Ce 3+. The photoluminescent excitation and the wave forms of time-dependent el ectroluminescent emission show that recombinant luminescence is the main pr ocess in SrS:Ce TFEL. The experimental results reveal that the excitation m echanism is related to the sulfur vacancies. (C) 2000 American Institute of Physics. [S0021- 8979(00)07220-0].