Transport in n(+)(p(+)) Si-AlQ-Al junctions

In this article, we report on transport across n(+)(p(+)) c-Si/AlQ/Al junct ions where AlQ is tris(8-hydroxy quinolato)aluminum, and n(+) and p(+) are n and p type degenerately doped crystalline silicon (c-Si). Specifically, w e show that n(+) c-Si is a very efficient electron injector into AlQ. We ha ve studied the temperature and thickness dependence of AlQ on the current-v oltage characteristics to understand transport in AlQ. From these measureme nts, we show that transport in AlQ is injection limited and the current is limited by tunneling injection from the contact into AlQ. We also report on the influence of the interface and gap states on transport in AlQ. (C) 200 0 American Institute of Physics. [S0021-8979(00)00621-6].