Kh. Jun et al., Low degradation and fast annealing effects of amorphous silicon multilayerprocessed through alternate hydrogen dilution, J APPL PHYS, 88(8), 2000, pp. 4881-4888
Alternately hydrogen diluted a-Si:H multilayers are shown to be a promising
concept for the fabrication of stable a-Si:H solar cells or other a-Si:H b
ased devices. The alternately hydrogen diluted amorphous silicon multilayer
s were obtained by toggling both the H-2/SiH4 dilution ratio and the total
flow rate of the gases under continuous UV light irradiation into the react
ion chamber of a photochemical vapor deposition system. The films were char
acterized by Fourier transformed infrared spectroscopy, spectroscopic ellip
sometry, cross-sectional transmission electron microscopy, and atomic force
microscopy. We applied these multilayers as the active layer of p-i-n type
thin film solar cells. The multilayer solar cells are compared to solar ce
lls incorporating a-Si:H made from pure SiH4 gas and to solar cells incorpo
rating a-Si:H made at a constant hydrogen dilution ratio containing nearly
the same hydrogen amount as the multilayer. We report on the light-soaking
and annealing behavior of the solar cells. The multilayer solar cell has an
exceptionally high recovery rate at low temperatures, which makes the sola
r cell degradation behavior highly sensitive to the cell temperature during
degradation. Following the relation, D(H)proportional to 1/tau, where D-H
and tau are the diffusion coefficient for hydrogen and time constant for an
nealing, respectively, the layered structure in the multilayer possibly ele
vates D-H, which accounts for rapid stabilization and annealing. (C) 2000 A
merican Institute of Physics. [S0021-8979(00)00821-5].