Low degradation and fast annealing effects of amorphous silicon multilayerprocessed through alternate hydrogen dilution

Citation
Kh. Jun et al., Low degradation and fast annealing effects of amorphous silicon multilayerprocessed through alternate hydrogen dilution, J APPL PHYS, 88(8), 2000, pp. 4881-4888
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
8
Year of publication
2000
Pages
4881 - 4888
Database
ISI
SICI code
0021-8979(20001015)88:8<4881:LDAFAE>2.0.ZU;2-Z
Abstract
Alternately hydrogen diluted a-Si:H multilayers are shown to be a promising concept for the fabrication of stable a-Si:H solar cells or other a-Si:H b ased devices. The alternately hydrogen diluted amorphous silicon multilayer s were obtained by toggling both the H-2/SiH4 dilution ratio and the total flow rate of the gases under continuous UV light irradiation into the react ion chamber of a photochemical vapor deposition system. The films were char acterized by Fourier transformed infrared spectroscopy, spectroscopic ellip sometry, cross-sectional transmission electron microscopy, and atomic force microscopy. We applied these multilayers as the active layer of p-i-n type thin film solar cells. The multilayer solar cells are compared to solar ce lls incorporating a-Si:H made from pure SiH4 gas and to solar cells incorpo rating a-Si:H made at a constant hydrogen dilution ratio containing nearly the same hydrogen amount as the multilayer. We report on the light-soaking and annealing behavior of the solar cells. The multilayer solar cell has an exceptionally high recovery rate at low temperatures, which makes the sola r cell degradation behavior highly sensitive to the cell temperature during degradation. Following the relation, D(H)proportional to 1/tau, where D-H and tau are the diffusion coefficient for hydrogen and time constant for an nealing, respectively, the layered structure in the multilayer possibly ele vates D-H, which accounts for rapid stabilization and annealing. (C) 2000 A merican Institute of Physics. [S0021-8979(00)00821-5].