Temperature dependence of the exciton decay times of different quantum structures coexisting in a ZnSe/CdSe/ZnSe heterostructure

Citation
Bp. Zhang et al., Temperature dependence of the exciton decay times of different quantum structures coexisting in a ZnSe/CdSe/ZnSe heterostructure, J APPL PHYS, 88(8), 2000, pp. 4916-4918
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
8
Year of publication
2000
Pages
4916 - 4918
Database
ISI
SICI code
0021-8979(20001015)88:8<4916:TDOTED>2.0.ZU;2-M
Abstract
Study by time-resolved photoluminescence shows that two classes of quantum structures coexist in a ZnSe/CdSe/ZnSe heterostructure in which the CdSe co verage is less than the critical thickness. Excitons from class-A structure s dominate the emission spectrum and exhibit temperature-independent decay times, demonstrating quantum-dot-like properties. On the other hand, excito nic transitions from class-B structures are characterized by decay times th at depend linearly on temperature, indicating two-dimensional features. The re is a sharp transition from class-A to class-B excitons as the emission e nergy goes from higher to lower energies across the emission band. (C) 2000 American Institute of Physics. [S0021-8979(00)03221-7].