PbFe12O19 thin films prepared by pulsed laser deposition on Si/SiO2 substrates

Pulsed laser ablation deposition has been used to grow polycrystalline PbFe 12O19 thin films with high coercivity on Si/SiO2 substrates. The influence of the substrate temperature (550-775 degrees C) and the oxygen pressure (1 .0-3.0 mbar) on the magnetic properties during the deposition is reported. The crystallisation of PbFe12O19 thin films occurs in the temperature range of 600-750 degrees C, which is somewhat lower than that for the Sr and Ba hexaferrites, which crystallise in the range of 750-850 degrees C. hi-type lead hexaferrite films with high saturation magnetisation (280 emu/cm(3)) a nd high coercive field (3.8 kOe) were grown using a substrate temperature o f 700 degrees C and a pressure of 3.0 mbar of oxygen. These films were obse rved to be isotropic, with an M-r/M-s ratio of similar to 0.5. (C) 2000 Els evier Science B.V. All rights reserved.