One-phonon-assisted electron Raman scattering in quantum well wires and free-standing wires

The differential cross section for an electron Raman scattering process in a semiconductor quantum well wire (QWW) and in a free-standing wire of cyli ndrical geometry involving phonon-assisted transitions is calculated for T = 0 K. A complete description of the phonon modes of cylindrical structures embedded in another material, including a correct treatment of the mechani cal and electrostatic matching conditions at the surface, is presented We c onsider the Frohlich interaction to illustrate the theory for a GaAs/AlAs s ystem. Electron states are considered to be confined within a QWW with fini te and infinite potential barriers. We also assume single parabolic conduct ion and valence bands. The emission spectra are discussed for different sca ttering Configurations and the selection rules for the processes; are also studied. Singularities in the spectra are found and interpreted.