Er deposition in the submonolayer range on weakly boron-doped Si(111) surface

Authors
Palmino, F Pelletier, S Ehret, E Gautier, B Labrune, JC
Citation
F. Palmino et al., Er deposition in the submonolayer range on weakly boron-doped Si(111) surface, J VAC SCI A, 18(5), 2000, pp. 2239-2243
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
18
Issue
5
Year of publication
2000
Pages
2239 - 2243
Database
ISI
SICI code
0734-2101(200009/10)18:5<2239:EDITSR>2.0.ZU;2-P
Abstract
Erbium silicide growth on weakly boron-doped Si(111) was studied by scannin g tunneling microscopy. The reactivity and the strain of this root 3 x root 3R30 degrees surface are different from those observed on Si(111) 7 X 7. T hese interesting features allow us to study the erbium silicide growth on a new interface. We have observed, in the submonolayer range, the formation of a metastable 2 root 3 X 2 root 3R30 degrees reconstruction and the nucle ation of two kinds of stable two-dimensional ErSi2. (C) 2000 American Vacuu m Society. [S0734-2101(00)00205-0].