Ultrathin titanium nitride layers grown on three different dielectrics were
studied to examine how low-energy ions change the chemical composition at
and near their interface. Comparisons were made by growing titanium nitride
under similar conditions both with (ion-assisted) and without (reactive) n
itrogen ions. Although the chemical reactions between the titanium nitride
and the three dielectrics under both growth conditions depend on the type o
f dielectric used, a few general observations were seen. In comparison with
the reactively grown samples, all of the ion-assisted growths show a signi
ficant increase in the amount of nitride in the titanium nitride layer at a
nd near the titanium nitride/dielectric interface. Moreover, the amount of
chemical binding between the titanium nitride and dielectric is increased w
hen low-energy ions are used. Finally, by using angle resolved x-ray photoe
mission it was determined that the enhancement in the deposition process fr
om low-energy ions occurs without inducing significant intermixing between
the titanium nitride layer and the dielectric. (C) 2000 American Vacuum Soc
iety. [S0734-2101(00)00105-6].