Effect of a thin Ni layer on hydrogenation and thermal release characteristics of Ti thin films

Citation
Lq. Shi et al., Effect of a thin Ni layer on hydrogenation and thermal release characteristics of Ti thin films, J VAC SCI A, 18(5), 2000, pp. 2262-2266
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
18
Issue
5
Year of publication
2000
Pages
2262 - 2266
Database
ISI
SICI code
0734-2101(200009/10)18:5<2262:EOATNL>2.0.ZU;2-L
Abstract
Carbon and oxygen contamination on the Ti surface strongly influences hydro gen absorption and desorption, and it can even passivate the surface comple tely. The effect of C and O on the hydrogen absorption and thermal release on Ti films was investigated by using high-energy non-Rutherford backscatte ring and elastic recoil detection techniques. The experimental results show that the concentration gradient in the region of about 300 nm near the sur face is very large due to the joint contamination of about 1.26 X 10(16) at oms/cm(2) of C and 2.5 x 1016 atoms/cm(2) of O; also, the thermal releasing temperature increased greatly. A thin Ni film coated on the Ti film may co nsiderably reduce the contamination of gaseous impurities, in particular C, and prevents further oxidation and improve the absorption and desorption o f hydrogen. (C) 2000 American Vacuum Society. [S0734-2101(00)00405-X].