N. Hellgren et al., Growth, structure, and mechanical properties of CNxHy films deposited by dc magnetron sputtering in N-2/Ar/H-2 discharges, J VAC SCI A, 18(5), 2000, pp. 2349-2358
Hydrogenated carbon nitride films were deposited by reactive de magnetron s
puttering in mixed Ar/N-2/H-2 discharges at temperatures of 100 and 350 deg
rees C. The total pressure was kept constant at 0.33 Pa and the gas mixture
s were varied in order to study the effect of the hydrogen on the resulting
film structure and properties. Chemical sputtering effects taking place du
ring deposition were found to be an important factor for the growth and str
uctural evolution. When H-2 is mixed into the discharge gas, the growth rat
e decreases considerably and the films become denser due to desorption of v
olatile species, like hydrocarbons, NH3 and HCN. For a H-2 fraction above 1
5%, no net film growth takes place. The hydrogen concentration incorporated
into the films was highest (up to similar to 33 at. %) for low growth temp
eratures and low nitrogen concentrations. Furthermore, the results indicate
that substantial amount of hydrogen are bonded to nitrogen. The incorporat
ion of hydrogen in the structure interrupts the relatively long basal plane
s in graphite-like structures, and some regions transform into an amorphous
structure. Nanoindentation measurements of the film showed decreased elast
icity, as well as decreased hardness when,incorporating hydrogen. However,
fullerene-like films grown at 350 degrees C in N-2/H-2 discharges exhibit h
igh elasticity for H-2 partial pressures as high as similar to 10(-3) Pa du
e to low H incorporation into these films. (C) 2000 American Vacuum Society
. [S0734-2101(00)03905-1].