Chemical vapor deposition of Ru thin films by direct liquid injection of Ru(OD)(3) (OD=octanedionate)

Pure Ru thin films were deposited on Si substrate using Ru (OD)(3) (OD = oc tanedionate) as a new liquid precursor with a newly designed warm wall reac tor by metalorganic chemical vapor deposition (MOCVD). Resistivity and film structure were largely dependent on MOCVD process parameters such as depos ition temperature, O-2/(O-2+Ar) ratio, and reactor pressure. With the incre ase of O-2/(O-2+Ar) ratio, minimum resistivity (20 mu Omega cm) was obtaine d and then the resistivity was increased due to the abnormal increase of su rface roughness. By modifying the position of a single quartz injector, uni form deposition of Ru thin films on an 8 in. Si wafer could be obtained. (C ) 2000 American Vacuum Society. [S0734-2101(00)08305-6].