Growth of diamond films on Ti-6Al-4V substrates and determination of residual stresses using Raman spectroscopy

Diamond films were deposited on Ti-6Al-4V substrates using the hot filament chemical vapor deposition method. improvement in film adhesion was achieve d by controlling the methane ratio and surface treatment of the substrate. The quality of film adhesion was established by measuring the residual comp ressive stress in between the film and substrate. A general model is used f or examining the micro-Raman spectrum in order to measure the residual biax ial stress. The as-grown films have shown residual compressive stress from 1.782 to 7.25 GPa, coming very close to the theoretically predicted value. (C) 2000 American Vacuum Society. [S0734-2101(00)01205-7].