Citation
Lw. Yin et al., Characteristics of some inclusions contained in synthetic diamond single crystals, MAT SCI E A, 293(1-2), 2000, pp. 107-111
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
ISSN journal
09215093
→ ACNP
Volume
293
Issue
1-2
Year of publication
2000
Pages
107 - 111
Database
ISI
SICI code
0921-5093(20001130)293:1-2<107:COSICI>2.0.ZU;2-X
Abstract
Transmission electron microscopy (TEM) and scanning electron microscopy (SE
M) have been successfully used to investigate microstructures of synthetic
diamond single crystals grown from the Fe-Ni-C system under high temperatur
e and high pressure. Several types of inclusions incorporated into the diam
ond during the process of diamond growth were identified. Both the chemical
composition and structure of the inclusions in diamond were successfully d
etermined. It was found that the inclusions trapped in the diamond consiste
d of f.c.c. (FeNi)(23)C-6, orthorhombic FeSi2, f.c.c. silicon carbide and a
morphous graphite. (C) 2000 Elsevier Science S.A. All rights reserved.