Segregation of phosphorus to SiO2/Si(001) interfaces

Authors
Dabrowski, J Mussig, HJ Baierle, R Caldas, MJ Zavodinsky, V
Citation
J. Dabrowski et al., Segregation of phosphorus to SiO2/Si(001) interfaces, MAT SC S PR, 3(1-2), 2000, pp. 85-89
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN journal
13698001 → ACNP
Volume
3
Issue
1-2
Year of publication
2000
Pages
85 - 89
Database
ISI
SICI code
1369-8001(200003)3:1-2<85:SOPTSI>2.0.ZU;2-C
Abstract
Dopant atoms segregate to SiO2/Si(001) interfaces. This causes problems dur ing manufacture of submicron microelectronic devices. On the basis of ab in itio calculations, we identify the physical mechanism by which P atoms are trapped and deactivated at SiO2/Si(001), We argue that segregation can occu r to defected as well as to defect-free interfaces. In the latter case, the interfacial stress stabilizes pairs of threefold-coordinated phosphorus at oms. Implications for Complementary Metal-Oxide-Semiconductor (CMOS) proces s design are discussed. (C) 2000 Elsevier Science Ltd. All rights reserved.