Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors

Authors
Lombardo, S Crupi, F Spinella, C Neri, B
Citation
S. Lombardo et al., Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors, MAT SC S PR, 2(4), 1999, pp. 359-367
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN journal
13698001 → ACNP
Volume
2
Issue
4
Year of publication
1999
Pages
359 - 367
Database
ISI
SICI code
1369-8001(199912)2:4<359:TDPAHB>2.0.ZU;2-N
Abstract
Time-resolved electrical measurements show transient phenomena occurring du ring degradation and intrinsic dielectric breakdown of gate oxide layers un der constant voltage Fowler-Nordheim stress. We have studied such transient s in metal/oxide/semiconductor (MOS) capacitors with an n(+) poly-crystalli ne Si/SiO2/n-type Si stack and with oxide thickness between 35 and 5.6 nm. The data adds new information concerning the intrinsic breakdown mechanism and these are shown and discussed together with the adopted measurement tec hniques. (C) 2000 Elsevier Science Ltd. All rights reserved.