Correlation of scanning thermal microscopy and near-field cathodoluminescence analyses on a blue GaN light emitting device

Citation
R. Heiderhoff et al., Correlation of scanning thermal microscopy and near-field cathodoluminescence analyses on a blue GaN light emitting device, MICROEL REL, 40(8-10), 2000, pp. 1383-1388
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
8-10
Year of publication
2000
Pages
1383 - 1388
Database
ISI
SICI code
0026-2714(200008/10)40:8-10<1383:COSTMA>2.0.ZU;2-Y
Abstract
A scanning near-field thermal microscope and a scanning electron microscope /scanning near-field optical microscope hybrid system for near-field cathod oluminescence investigations were used to characterize blue GaN LEDs. Optoe lectronic, electronic and thermal device properties are determinable with h ighest resolution. These results provide an interesting perspective with re spect to failure analyses and reliability of the devices. (C) 2000 Elsevier Science Ltd. All rights reserved.