Analysis of high-power devices using proton beam induced currents

Ion beam induced charge microscopy (IBIC microscopy), a new technique which utilizes a focused beam of high energy (several MeV) protons, has been use d to analyse various semiconductor structures, e.g. microelectronic circuit s, radiation detectors, solar cells and CVD diamond thin films [1, 2]. Here we report the first attempt to investigate high power devices with this te chnique. it is demonstrated that IBIC analysis allows the characterisation of layers of different doping types located several tenths of microns below the sample surface using an ion beam energy of 2 MeV. The devices investig ated are high-power light-triggered thyristors. (C) 2000 Elsevier Science L td. All rights reserved.