Measurement of the thermomechanical strain of electronic devices by shearography

Citation
S. Dilhaire et al., Measurement of the thermomechanical strain of electronic devices by shearography, MICROEL REL, 40(8-10), 2000, pp. 1509-1514
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
8-10
Year of publication
2000
Pages
1509 - 1514
Database
ISI
SICI code
0026-2714(200008/10)40:8-10<1509:MOTTSO>2.0.ZU;2-S
Abstract
This paper deals with the optical measurement of strain in electronic power devices under normal operating conditions. This non-contact and non-invasi ve method called shearography is based upon speckle interferometry. The tec hnique developed produces images of normal displacement gradient of devices . Numerical processing allows the determination of the surface displacement and its related strain. The main advantages of the measuring tool are to b e a simple optical set-up, to be very robust with a good sensitivity and to measure directly strain. Therefore, his well suited to fit into an industr ial environment. (C) 2000 Elsevier Science Ltd. Ail rights reserved.