MOS transistor reliability under analog operation

Reliability evaluation for MOS transistors under analog operation requires different or specifically adapted approaches compared to the ones known fro m the digital world. Focussing on the particular analog operating condition s and the related lifetime criteria, a comprehensive discussion is performe d of MOSFET reliability taking into account channel hot-carrier stress, bia s temperature instabilities, and oxide wear-out. The conditions for the occ urrence of these mechanisms and criteria for stress induced malfunction of analog circuits are discussed and the physics behind the behavior of typica l analog device parameters after stress are addressed. Furthermore, specifi c aspects concerning the definition of analog lifetime criteria and strateg ies to guarantee reliability by means of circuit design are considered. (C) 2000 Elsevier Science Ltd. All rights reserved.