Modeling the conduction characteristics of broken down gate oxides in MOS structures

We present an analytic model for the post-breakdown conduction through thin gate oxides in MOS structures. The breakdown paths across the oxide film a re considered to behave as mesoscopic quantum point contacts in which discr ete transverse energy levels arise as a consequence of the lateral confinem ent of the electrons' wave functions. In the longitudinal direction, such l evels are viewed by the incoming electrons as effective potential barriers which can act as transmitting or backscattering conduction channels. We sho w that the existence of these levels gives rise to the so-called nonlinear conduction regime. (C) 2000 Elsevier Science Ltd. All rights reserved.