Short noise partial suppression in the SILC regime

Citation
F. Crupi et al., Short noise partial suppression in the SILC regime, MICROEL REL, 40(8-10), 2000, pp. 1605-1608
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
8-10
Year of publication
2000
Pages
1605 - 1608
Database
ISI
SICI code
0026-2714(200008/10)40:8-10<1605:SNPSIT>2.0.ZU;2-U
Abstract
The power spectral densities of the current fluctuations through fresh and stressed thin oxide are investigated by means of a purposely designed ultra low noise measurement system. It is reported for the first time that the S ILC noise spectrum exhibits partially suppressed shot noise down to about 7 0% with respect to the full shot noise observed for fresh oxide in Fowler-N ordheim regime. II is shown that a single trap assisted tunneling model wit h a uniform trap distribution in both energy and space is able to justify t he observed noise behavior. (C) 2000 Elsevier Science Ltd. All rights reser ved.