Yield and reliability analysis of digital standard cells with resistive defects

Citation
M. Huber et al., Yield and reliability analysis of digital standard cells with resistive defects, MICROEL REL, 40(8-10), 2000, pp. 1635-1640
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
8-10
Year of publication
2000
Pages
1635 - 1640
Database
ISI
SICI code
0026-2714(200008/10)40:8-10<1635:YARAOD>2.0.ZU;2-0
Abstract
New kinds of faults in digital ICs caused by particles with a certain resis tance value are presented. By using an enhanced version of a three dimensio nal contamination-defect-fault simulator the faulty circuit behaviour cause d by these defects and appropriate test strategies have been investigated. Moreover the dependence of failure probability on the defect size has been simulated and used to obtain a reliability estimate of the analysed ICs. (C ) 2000 Elsevier Science Ltd. All rights reserved.