Use of electrical stress and isochronal annealing on power mosfets in order to characterize the effects of Co-60 irradiation.

Authors
Picard, C Brisset, C Hoffman, A Charles, JP Joffre, F Adams, L Siedle, AH
Citation
C. Picard et al., Use of electrical stress and isochronal annealing on power mosfets in order to characterize the effects of Co-60 irradiation., MICROEL REL, 40(8-10), 2000, pp. 1647-1652
Citations number
18
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
8-10
Year of publication
2000
Pages
1647 - 1652
Database
ISI
SICI code
0026-2714(200008/10)40:8-10<1647:UOESAI>2.0.ZU;2-Q
Abstract
Fowler-Nordheim injection and isochronal anneals for several power MOSFETs of various manufacturers made it possible to highlight that characteristic charge trap temperatures were identical to those due to radiation with Co-6 0 source. Results allow us to put forward some assumptions about electrical stress use as a selection component method for radiation environment. (C) 2000 Elsevier Science Ltd. All rights reserved.