C. Picard et al., Use of electrical stress and isochronal annealing on power mosfets in order to characterize the effects of Co-60 irradiation., MICROEL REL, 40(8-10), 2000, pp. 1647-1652
Fowler-Nordheim injection and isochronal anneals for several power MOSFETs
of various manufacturers made it possible to highlight that characteristic
charge trap temperatures were identical to those due to radiation with Co-6
0 source. Results allow us to put forward some assumptions about electrical
stress use as a selection component method for radiation environment. (C)
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