Reliability testing of high-power multi-chip IGBT modules

Citation
G. Lefranc et al., Reliability testing of high-power multi-chip IGBT modules, MICROEL REL, 40(8-10), 2000, pp. 1659-1663
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
8-10
Year of publication
2000
Pages
1659 - 1663
Database
ISI
SICI code
0026-2714(200008/10)40:8-10<1659:RTOHMI>2.0.ZU;2-K
Abstract
Power-cycling tests are among the most important tools used for evaluating the reliability of power modules. They are in most cases carried out at the rated module current and during a relatively short cycle time, i.e. under worst-case operating conditions. Test conditions must be defined which also permit information to be obtained about failure mechanisms in the various parts of the module. This paper describes the measurement of the temperatur e distribution, the test conditions, the rates of temperature change in mod ules with 36 semiconductor components as well as the results of power-cycli ng tests in which the thermomechanical stress principally affects the subst rate-baseplate interface. (C) 2000 Elsevier Science I,td. All rights reserv ed.