Comparison of RF and DC life-test effects on GaAs power MESFETs

The reliability of ion-implanted power MESFETs submitted to RF and DC life- tests in impact ionization regime has been investigated by DC electrical ch aracterization, LF noise analysis and Drain Current Transient analysis (DCT S). The two types of life-test have induced no degradation of the channel. RF life-test has induced DC parameter evolutions, but no significant drift of dynamic performances. Different evolutions of the interface state effect ive density in the gate-drain access region have been induced after DC and RF life-test. (C) 2000 Elsevier Science Ltd. All rights reserved.