Application of analytical TEM for failure analysis of semiconductor devicestructures

TEM imaging combined with electron diffraction and analytical methods like EDS and EELS becomes increasingly important in cross-sectional on-product c haracterization and failure analysis in semiconductor industry, mainly driv en by the ongoing scaling-down of device structures. A new analytical techn ique - energy filtering transmission electron microscopy (EFTEM) - is used more and more in physical failure analysis. Improved TEM sample preparation techniques like the FIB-cut technique allow the reliable target preparatio n of defects even in the case that a defect has already been prepared for S EM analysis. The application of analytical TEM for failure analysis is demo nstrated for particle issues, open electrical contacts in tungsten LI and d egradation of AlCu1 interconnects. (C) 2000 Elsevier Science Ltd. All right s reserved.