New FIB/TEM evidence for a REDR mechanism in sudden failures of 980 nm SL SQW InGaAs/AlGaAs pump laser diodes

Authors
Vanzi, M Salmini, G De Palo, R
Citation
M. Vanzi et al., New FIB/TEM evidence for a REDR mechanism in sudden failures of 980 nm SL SQW InGaAs/AlGaAs pump laser diodes, MICROEL REL, 40(8-10), 2000, pp. 1753-1757
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
8-10
Year of publication
2000
Pages
1753 - 1757
Database
ISI
SICI code
0026-2714(200008/10)40:8-10<1753:NFEFAR>2.0.ZU;2-Z
Abstract
FIB/TEM images of failed laser diodes showed features compatible with local fusion and recrystallization around extended defect of the strained active layer. The shape of the melted area calls for excess temperature along sin gle straight lines, compatible with misfit dislocations. This uniquely defi nes the sequence of defect propagation and interaction, pointing to the val idation of the REDR theory for intrinsic origin of sudden failures. (C) 200 0 Elsevier Science Ltd. All rights reserved.