HBT amplifiers boast high linearity

Authors
Citation
D. Keller, HBT amplifiers boast high linearity, MICROWAV RF, 39(9), 2000, pp. 148-148
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROWAVES & RF
ISSN journal
07452993 → ACNP
Volume
39
Issue
9
Year of publication
2000
Pages
148 - 148
Database
ISI
SICI code
0745-2993(200009)39:9<148:HABHL>2.0.ZU;2-9
Abstract
DIGITAL wireless communications systems have pushed the limits of high-freq uency technology while operating under severe price constraints. The amplif iers for these systems, for example, must be inexpensive yet provide genero us gain with high linearity. The amplifiers must also be extremely reliable , since wireless customers expect no less from their services. These seemin gly unrealistic requirements are met through smart design practices and con trolled manufacturing processes, a combination that has led to the developm ent of a family of medium-power, heterojunction-bipolar-transistor (HBT) am plifiers from EiC Corp. (Fremont, CA). The amplifiers provide better than 1 5-dB gain and more than +18-dBm output power through 3 GHz.