Nonlinear emission of semiconductor microcavities in the strong coupling regime

Citation
R. Houdre et al., Nonlinear emission of semiconductor microcavities in the strong coupling regime, PHYS REV L, 85(13), 2000, pp. 2793-2796
Citations number
18
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
85
Issue
13
Year of publication
2000
Pages
2793 - 2796
Database
ISI
SICI code
0031-9007(20000925)85:13<2793:NEOSMI>2.0.ZU;2-G
Abstract
We report on the nonlinear laserlike emission from semiconductor microcavit ies in the strong coupling regime; Under resonant continuous wave excitatio n we;observe a highly emissive state. The energy, dispersion, and spatial e xtent of this state is measured and is found to be dispersionless and spati ally localized. This state coexists with luminescence that follows the usua l cavity-polariton dispersion. It is attributed to the amplification of lum inescence by a parametric gain due to cavity-polariton scattering. Despite the resonant excitation at 1.6 K, we observe no sign of Bose-Einstein conde nsation nor Boser action.