Interplay of self-doping and disorder in epitaxial Bi2Sr2Can-1Cun-1O2n+4+x(n = 1, 2) thin films under heavy-ion irradiation

Citation
A. Pomar et al., Interplay of self-doping and disorder in epitaxial Bi2Sr2Can-1Cun-1O2n+4+x(n = 1, 2) thin films under heavy-ion irradiation, PHYS REV L, 85(13), 2000, pp. 2809-2812
Citations number
17
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
85
Issue
13
Year of publication
2000
Pages
2809 - 2812
Database
ISI
SICI code
0031-9007(20000925)85:13<2809:IOSADI>2.0.ZU;2-X
Abstract
We propose a novel mechanism for the modification of T-c in Bi2Sr2Can-1CunO 2n+4+x epitaxial thin films (2212 and 2201) under energetic heavy-ion irrad iation. By irradiating films with various oxygen content, we show from the temperature dependence of the resistance that irradiation always produces a doping effect superimposed on the damage caused to the sample. The effect is larger in 2201 than in 2212 thin films. The T-c decrease observed by irr adiating optimally doped films is partially due to this doping effect. Irra diation of semiconducting samples restores metallic superconducting behavio r