Evaluation of compositional intermixing at interfaces in Si(Ge)/Si1-xGex heteroepitaxial structures grown by molecular beam epitaxy with combined sources of Si and GeH4

Authors
Orlov, LK Ivina, NL Potapov, AV
Citation
Lk. Orlov et al., Evaluation of compositional intermixing at interfaces in Si(Ge)/Si1-xGex heteroepitaxial structures grown by molecular beam epitaxy with combined sources of Si and GeH4, SEMICONDUCT, 34(10), 2000, pp. 1103-1108
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
10
Year of publication
2000
Pages
1103 - 1108
Database
ISI
SICI code
1063-7826(2000)34:10<1103:EOCIAI>2.0.ZU;2-Q
Abstract
The main causes of the diffusion spreading of a solid-solution composition near the boundaries of the Si transport channel in a Si/Si1-xGex heterostru cture grown by molecular-beam epitaxy combined with solid (Si) and gaseous (GeH4) sources are considered. For the grown structures, the contributions from various mechanisms involved in forming the profile of the metallurgica l boundary of the layer are compared and the effect of channel boundary spr eading on the mobility of a two-dimensional electron gas in the channel is evaluated. (C) 2000 MAIK "Nauka/Interperiodica".