Sg. Gasan-zade et al., Special features of photoelectric properties of p-CdxHg1-xTe crystals at low temperatures: The effects of the freezing-out of holes and elastic stress, SEMICONDUCT, 34(10), 2000, pp. 1137-1143
The temperature and pressure dependences of photoconductivity, the photoele
ctromagnetic effect, dark electrical conductivity, and the Hall coefficient
in p-CdxHg1-xTe samples with x approximate to 0.20-0.22 were measured at l
ow temperatures. It is shown that recombination transitions in the temperat
ure region of T < 30-40 K may be interpreted in the context of the two-leve
l Shockley-Read model with allowance made for the freezing-out of majority
charge carriers (holes). Furthermore, the second recombination center, whic
h manifests itself only in the aforementioned temperature region, is an acc
eptor of a non-Coulomb type with an ionization energy of about 10-15 meV. (
C) 2000 MAIK "Nauka/Interperiodica".