ZnMgSe/ZnCdSe-based distributed Bragg mirrors grown by molecular-beam epitaxy on ZnSe substrates

Molecular-beam epitaxy was used to grow distributed Bragg mirrors on ZnSe s ubstrates. These mirrors are composed of 10.5 and 20 pairs of alternating q uarter-wave ZnMgSe and ZnCdSe layers with reflectance peaks at the waveleng ths of 530 and 560 nm, respectively, which fall in the transparency region of the substrate. These structures were studied by low-temperature cathodol uminescence, atomic-force microscopy, and transmission electron microscopy. The maximum of the reflection coefficient was 78% for a 20-pair mirror and 66% for a 10.5-pair mirror. This result is interpreted in terms of a model that takes into account the roughness of the interlayer boundaries. (C) 20 00 MAIK "Nauka/Interperiodica".