Recombination of self-trapped excitons in silicon nanocrystals grown in silicon oxide

The kinetics of photoluminescence (PL) and steady-state PL from silicon nan ocrystals formed in the SiO2 matrix by silicon ion implantation were studie d experimentally for the first time in the temperature range from liquid-he lium to room temperature. A dramatic increase in the photoluminescence deca y time, accompanied by PL intensity quenching, is observed below 70 K. The results obtained indicate that the silicon nanocrystal PL arises from radia tive recombination of excitons self-trapped at the silicon nanocrystal-SiO2 interface. (C) 2000 MAIK "Nauka/ Interperiodica".