Anomalous dispersion, differential gain, and dispersion of the alpha-factor in InGaAs/AlGaAs/GaAs strained quantum-well semiconductor lasers

Authors
Bogatov, AP Boltaseva, AE Drakin, AE Belkin, MA Konyaev, VP
Citation
Ap. Bogatov et al., Anomalous dispersion, differential gain, and dispersion of the alpha-factor in InGaAs/AlGaAs/GaAs strained quantum-well semiconductor lasers, SEMICONDUCT, 34(10), 2000, pp. 1207-1213
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
10
Year of publication
2000
Pages
1207 - 1213
Database
ISI
SICI code
1063-7826(2000)34:10<1207:ADDGAD>2.0.ZU;2-4
Abstract
A new procedure for the experimental determination of the differential gain and dispersion of the amplitude-phase coupling coefficient in semiconducto r injection lasers was proposed and implemented. The alpha-factor and diffe rential gain for InGaAs/AlGaAs/GaAs single quantum well (QW) semiconductor lasers were determined using this procedure in a wide spectral range (from 957 to 996 nm) at various pumping current densities (from 280 to 850 A/cm(2 )). The factor which characterizes the dispersion of the group velocity and restricts the minimum duration of the lasing pulse at the level of 10(-13) s was experimentally determined for InGaAs lasers for the first time. (C) 2000 MAIK "Nauka/Interperiodica".