An artificially anisotropic thermoelectric material with semiconducting and superconducting layers

Citation
Da. Pshenai-severin et al., An artificially anisotropic thermoelectric material with semiconducting and superconducting layers, SEMICONDUCT, 34(10), 2000, pp. 1214-1218
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
10
Year of publication
2000
Pages
1214 - 1218
Database
ISI
SICI code
1063-7826(2000)34:10<1214:AAATMW>2.0.ZU;2-J
Abstract
The thermoelectric parameters of an artificially anisotropic material compo sed of semiconducting and superconducting layers are considered. The transv erse thermoelectric figure of merit and the sensitivity of a sensor respond ing to small heat fluxes are calculated. The use of high-temperature superc onductor layers appreciably changes the optimal geometry of the layered str ucture (layer inclination angle and thickness ratio) compared with normal c onductors. The figure of merit and the sensitivity of a thermoelectric elem ent with superconducting layers exceed the respective parameters of a struc ture with metallic layers by a factor of 2-3. (C) 2000 MAIK "Nauka/Interper iodica".