ANALYSIS OF NI ON SI-WAFER SURFACES USING SYNCHROTRON-RADIATION EXCITED TOTAL-REFLECTION X-RAY-FLUORESCENCE ANALYSIS

Total Reflection X-Ray Fluorescence Analysis excited with synchrotron radiation (SR-TXRF) monochromatized by a multilayer (ML) has been used for the analysis of Ni on Si-wafer surfaces. Intentionally contaminat ed wafers using droplet samples have been used to determine the detect ion limits. Two different kinds of the geometrical arrangement of samp le and detector have been compared, one of them resulting in detection limits of 13 fg for Ni. Experiments have been performed at Hasylab, B eam L using a bending magnet radiation. (C) 1997 Elsevier Science B.V.