Shadow-epitaxy for flexible crystalline thin-film silicon solar cell design

Citation
R. Brendel et al., Shadow-epitaxy for flexible crystalline thin-film silicon solar cell design, SOL EN MAT, 64(3), 2000, pp. 251-260
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
64
Issue
3
Year of publication
2000
Pages
251 - 260
Database
ISI
SICI code
0927-0248(200010)64:3<251:SFFCTS>2.0.ZU;2-6
Abstract
Crystalline silicon thin-film solar modules require a cost-effective means for the fabrication of an integrated series connection. We introduce select ive epitaxy by ion-assisted deposition through shadow masks for the integra ted series connection of ultrathin monocrystalline and textured Si solar ce lls. The series connection is made in situ during Si-film deposition thus a voiding any trench etching. The open-circuit voltage of an experimental min i-module consisting of six cells is six times as large as the open-circuit voltage of a single cell. Epitaxy through shadow masks also permits the in situ realization of parallel multi-junction solar cells. The experimental q uantum efficiency analysis of a parallel multi-junction device with three j unctions reveals an enhanced carrier collection. The apparent effective dif fusion length of the multi-junction cell is three times larger than that fo r a conventional single-junction device. (C) 2000 Elsevier Science B.V. All rights reserved.