Intersubband transitions in strained Si/Si1-xGex/Si quantum wells

Authors
Hionis, G Tsetseri, M Zora, A Triberis, GP
Citation
G. Hionis et al., Intersubband transitions in strained Si/Si1-xGex/Si quantum wells, SUPERLATT M, 28(2), 2000, pp. 151-156
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERLATTICES AND MICROSTRUCTURES
ISSN journal
07496036 → ACNP
Volume
28
Issue
2
Year of publication
2000
Pages
151 - 156
Database
ISI
SICI code
0749-6036(200008)28:2<151:ITISSQ>2.0.ZU;2-F
Abstract
The energy subbands in pseudomorphic p-type Si/Si1-xGex/Si quantum wells ar e calculated within the multiband effective-mass approximation that describ es the heavy, light and split-off hole Valence bands. We examine the inters ubband transitions in this system and the selection rules are obtained for a light polarization vector parallel or perpendicular to the growth directi on. Comparison is made with other theories and experiment. (C) 2000 Academi c Press.