Amorphous Si/SiO2 (a-Si/SiO2) superlattices have been fabricated by the mag
netron sputtering technique. The superlattice with an Si layer thickness of
1.8 nm has been characterized by transmission electron microscopy (TEM). T
he result indicates that most of the regions in the Si layer consist of amo
rphous phase, while regular structure appears in some local regions. This i
s in agreement with the Raman scattering spectroscopy. The optical absorpti
on spectrum and photoluminescence (PL) spectrum have been measured. Moreove
r, the third-order optical nonlinearity chi((3)) of this superlattice has b
een measured. To our knowledge, this is the first investigation of the nonl
inear absorption and refractive index of an a-Si/SiO2 superlattice using th
e Z-scan technique. The real and imaginary parts of chi((3)) have been foun
d to be 1.316 x 10(-7) eus and -5.596 x 10(-7) eus, respectively, which are
about two orders of magnitude greater than those of porous silicon. The re
sults may be attractive for potential application in electro-optics devices
. (C) 2000 Academic Press.