I. Khadzhi et Lv. Fedorov, Interaction of light with a semiconductor thin film, taking into account concentration gain of the dipole moment of the excitonic transition, TECH PHYS, 45(10), 2000, pp. 1296-1306
The peculiarities of nonlinear transmission of ultrashort pulses of resonan
ce laser radiation by a semiconductor thin film in the excitonic spectral r
egion have been studied, taking into account the exciton-phonon interaction
and concentration gain of the dipole moment of the excitonic transition. I
t has been shown that under exact resonance conditions the film transmits o
nly the leading edge of the incident rectangular pulse and completely refle
cts the remaining part. For a nonzero off-resonance, a residual transmissio
n occurs. A series of possibilities for transforming Gaussian pulses is pre
dicted. The state equations for steady-state bistable transmission (reflect
ion) have been derived, and the stability of the solutions has been studied
. A theorem of areas, which predicts area restriction of the transmitted pu
lses, has been stated; namely, the transmitted pulse area cannot exceed pi/
2. (C) 2000 MAIK "Nauka/Interperiodica".