Cross-sectional atomic force microscopy imaging of polycrystalline thin films

Citation
C. Ballif et al., Cross-sectional atomic force microscopy imaging of polycrystalline thin films, ULTRAMICROS, 85(2), 2000, pp. 61-71
Citations number
32
Categorie Soggetti
Multidisciplinary,"Spectroscopy /Instrumentation/Analytical Sciences
Journal title
ULTRAMICROSCOPY
ISSN journal
03043991 → ACNP
Volume
85
Issue
2
Year of publication
2000
Pages
61 - 71
Database
ISI
SICI code
0304-3991(200010)85:2<61:CAFMIO>2.0.ZU;2-3
Abstract
Atomic force microscopy (AFM) can be used to image cross-sections of thin-f ilm samples. So far, however, it has mainly been used to study cross-sectio ns of epitaxial systems or integrated circuits on crystalline substrates. I n this paper, we show that AFM is a powerful tool to image fractured cross- sections of polycrystalline thin films deposited on crystalline and non-cry stalline substrates, yielding unique information on the three-dimensional p roperties of the cross-sections, with a spatial resolution in the nm range. Original images of three different heterostructure systems are presented: Si(wafer)/SnO2/CdS/CdTe, glass/Mo/Cu(In,Ga)Se-2/CdS/ZnO, and glass/SnO2/WO3 . We discuss the results by comparing AFM and scanning electron microscopy (SEM) images, and explain, for the different materials, why the AFM provide s useful additional information. (C) 2000 Elsevier Science B.V. All rights reserved.