Charging dynamics of Si-quantum dots in tunnel capacitor

Using frequency-dependent capacitance spectroscopy, we investigate the char ging dynamics of silicon quantum dots embedded in oxide matrix through a Si O2/Si-quantum dots/SiO2/Si-substrate tunnel capacitor. Two resonance peaks both for capacitance and conductance in the inversion region are observed a t room temperature, being attributed to the direct tunneling between the co nductance band of Si-substrate and the one-and two-electron ground-state le vel of the Si quantum dot. The Coulomb charging energy of the dots is extra cted from the experimental results.