Single-electron quantum dots in silicon MOS structures

Authors
Khoury, M Gunther, A Milicic, S Rack, J Goodnick, SM Vasileska, D Thornton, TJ Ferry, DK
Citation
M. Khoury et al., Single-electron quantum dots in silicon MOS structures, APPL PHYS A, 71(4), 2000, pp. 415-421
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
71
Issue
4
Year of publication
2000
Pages
415 - 421
Database
ISI
SICI code
0947-8396(200010)71:4<415:SQDISM>2.0.ZU;2-F
Abstract
We present experimental results for two types of quantum dots, which are em bedded within a silicon metaloxide-semiconductor structure. Evidence is fou nd for single-electron charging at low temperature, and for an asymmetric s hape of the dot. First results of simulations of these dots are presented.