Structural imperfections in synthetic diamond single crystals prepared by the HPHT method

Citation
Lw. Yin et al., Structural imperfections in synthetic diamond single crystals prepared by the HPHT method, APPL PHYS A, 71(4), 2000, pp. 457-459
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
71
Issue
4
Year of publication
2000
Pages
457 - 459
Database
ISI
SICI code
0947-8396(200010)71:4<457:SIISDS>2.0.ZU;2-O
Abstract
Structural imperfections in synthetic diamond single crystal prepared under high temperature and high pressure (HPHT) in the presence of a Fe65Ni35 ca talyst have been examined with transmission electron microscopy (TEM) and m oire patterns. The existence of stacking faults, concentric dislocation loo ps and an array of dislocations in the diamond was suggested. The formation mechanism of these structural imperfections was analyzed briefly. It was f ound that the structural imperfections originate from an excess amount of s aturated vacancies and internal stresses associated with inclusions in the diamond.